STM32W108HBU6 STMicroelectronics, STM32W108HBU6 Datasheet - Page 205

• Manufacturer Part Number: STM32W108HBU6
• Manufacturer: STMicroelectronics

Specifications of STM32W108HBU6

• Operating Temperature (min): -40C
• Operating Temperature (max): 85C
• Processing Unit: Microprocessor
• Operating Supply Voltage (min): 1.18V
• Operating Supply Voltage (typ): 1.25V
• Operating Supply Voltage (max): 1.32V
• Package Type: VFQFPN EP
• Pin Count: 40
• Mounting: Surface Mount
• Rad Hardened: No
• Lead Free Status / Rohs Status: Supplier Unconfirmed

STM32W108CB, STM32W108HB
17
Revision history
Table 60.
16-Sep-2009
21-Sep-2009
24-Nov-2009
22-Sep-2010
09-Dec-2010
01-Mar-2010
20-Oct-2010
Date
Document revision history
Revision
1
2
3
4
5
6
7
Initial release.
Modified document status to Preliminary Data.
Major revision of
Serial interfaces on page
Added
Section 4: Embedded memory on page 27
voltage regulator on page
Updated
Added notes to
configuration on page 84
on page
Updated parameters and values in
conditions on page
Added
page 182
control and status registers on page
Added Total Tx current values for 24 MHz in
characteristics on page 193
consumption on page
Updated
and
and 6 MHz
Added
enabled and 6MHz
Modified system wakeup time from deep sleep in
system electrical
Updated datasheet status to full datasheet.
Doc ID 16252 Rev 7
Table 45: ADC module key parameters for input buffer disabled
Section 2: Documentation conventions on page
Section 13.1: STM32W108 JTAG TAP connection on
Table 46: ADC module key parameters for input buffer
156.
Section 11.1.8: Calibration on page
Table 44: ADC module key parameters for 1 MHz sampling
and
sampling.
Section 6.4.4: Slow timers (Watchdog and Sleeptimer)
Software reset on page
Section 1.2: Overview on page 12
characteristics.
185.
sampling.
196.
and
71.
52.
and updated
Changes
Section 11: Analog-to-digital converter
Table 37: General operating
43.
35,
Figure 55: Transmit power
and
Section 9.6.1: Setup and
Table 52: DC electrical
162.
Section 7: Integrated
Table 54: Non-RF
Revision history
and
14,
Section 9:
205/208