MT48H8M32LFB5-10:G Micron Technology Inc, MT48H8M32LFB5-10:G Datasheet - Page 50

• Manufacturer Part Number: MT48H8M32LFB5-10:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
COMMAND
A0-A9, A11
1. For this example, the CAS latency = 2.
2. A9 and A11 = “Don’t Care.”
3. Page left open; no
BA0, BA1
DQM 0-3
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
CKE
A10
CLK
DQ
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
t
T1
RP.
NOP
t CH
t CMS
t CK
COLUMN m 2
T2
BANK
READ
t CMH
Figure 41: Read – Full-page Burst
CAS Latency
T3
NOP
t LZ
t AC
T4
Dout m
NOP
t OH
t AC
50
512 locations within same row
Full-page burst does not self-terminate.
Can use BURST TERMINATE command.
D
T5
OUT
NOP
t OH
m+1
Full page completed
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t AC
D
T6
NOP
OUT
t OH
t AC
m+2
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1
Tn + 1
D
NOP
OUT
t OH
m-1
t AC
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
BURST TERM
Tn + 2
3
D
OUT
t OH
256Mb: x32
m
t AC
PRELIMINARY
Tn + 3
D
OUT
NOP
DON’T CARE
UNDEFINED
t OH
m+1
t HZ
Tn + 4
NOP