MT48H8M32LFB5-10:G Micron Technology Inc, MT48H8M32LFB5-10:G Datasheet - Page 53

• Manufacturer Part Number: MT48H8M32LFB5-10:G
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M32LFB5-10:G

• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 17/8/7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 65mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

NOTE:
pdf: 09005aef80d460f2, source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. D 9/04 EN
DQMU, DQML
1. For this example, the burst length = 4.
2. A9 and A11 = “Don’t Care.”
COMMAND
A0-A9, A11
See Table 14, Electrical Characteristics and Recommended AC Operating Conditions, on page 35.
BA0, BA1
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
T1
NOP
ENABLE AUTO PRECHARGE
Figure 44: Write – With Auto Precharge
t CMS
t CL
t DS
COLUMN m 2
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
IN
T4
NOP
m + 2
t DH
53
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR
T6
NOP
T7
NOP
1
MOBILE SDRAM
©2003 Micron Technology, Inc. All rights reserved.
t RP
256Mb: x32
T8
NOP
PRELIMINARY
DON’T CARE
ACTIVE
ROW
ROW
BANK
T9