M50LPW040K1 Micron Technology Inc, M50LPW040K1 Datasheet - Page 5

• Manufacturer Part Number: M50LPW040K1
• Manufacturer: Micron Technology Inc

Specifications of M50LPW040K1

• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 11/50ns
• Interface Type: Parallel/Serial
• Boot Type: Top
• Address Bus: 4/11Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: PLCC
• Sync/async: Async/Sync
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 32
• Lead Free Status / Rohs Status: Compliant

Top Block Lock (TBL). The Top Block Lock
input is used to prevent the Top Block (Block 7)
from being changed. When Top Block Lock, TBL,
is set Low, V
operations in the Top Block have no effect,
regardless of the state of the Lock Register. When
Top Block Lock, TBL, is set High, V
protection of the Block is determined by the Lock
Register. The state of Top Block Lock, TBL, does
not affect the protection of the Main Blocks (Blocks
0 to 6).
Top Block Lock, TBL, must be set prior to a Pro-
gram or Block Erase operation is initiated and
must not be changed until the operation completes
or unpredictable results may occur. Care should
be taken to avoid unpredictable behavior by
changing TBL during Program or Erase Suspend.
Write Protect (WP). The Write Protect input is
used to prevent the Main Blocks (Blocks 0 to 6)
from being changed. When Write Protect, WP, is
set Low, V
in the Main Blocks have no effect, regardless of
the state of the Lock Register. When Write Protect,
WP, is set High, V
determined by the Lock Register. The state of
Write Protect, WP, does not affect the protection of
the Top Block (Block 7).
Write Protect, WP, must be set prior to a Program
or Block Erase operation is initiated and must not
be changed until the operation completes or un-
predictable results may occur. Care should be tak-
en to avoid unpredictable behavior by changing
WP during Program or Erase Suspend.
Reserved for Future Use (RFU). These pins do
not have assigned functions in this revision of the
part. They must be left disconnected. (Pin 9 in the
PLCC32, and Pin 21 in the TSOP40, may also be
driven High or driven Low.)
Address/Address Multiplexed (A/A Mux)
Signal Descriptions
For the Address/Address Multiplexed (A/A Mux)
Interface see Figure 2, Logic Diagram, and Table
3, Signal Names.
Address Inputs (A0-A10). The Address Inputs
are used to set the Row Address bits (A0-A10) and
the Column Address bits (A11-A18). They are
latched during any bus operation by the Row/Col-
umn Address Select input, RC.
Data Inputs/Outputs (DQ0-DQ7). The Data In-
puts/Outputs hold the data that is written to or read
IL
, Program and Block Erase operations
IL
, Program and Block Erase
IH
, the protection of the Block is
IH
, the
Table 3. Signal Names (A/A Mux Interface)
from the memory. They output the data stored at
the selected address during a Bus Read opera-
tion. During Bus Write operations they represent
the commands sent to the Command Interface of
the internal state machine. The Data Inputs/Out-
puts, DQ0-DQ7, are latched during a Bus Write
operation.
Output Enable (G). The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W). The Write Enable, W, controls
the Bus Write operation of the memory’s Com-
mand Interface.
Row/Column Address Select (RC). The
Column Address Select input selects whether the
Address Inputs should be latched into the Row
Address bits (A0-A10) or the Column Address bits
(A11-A18). The Row Address bits are latched on
the falling edge of RC whereas the Column
Address bits are latched on the rising edge.
Ready/Busy Output (RB). The Ready/Busy pin
gives the status of the memory’s Program/Erase
Controller. When Ready/Busy is Low, V
memory is busy with a Program or Erase operation
and it will not accept any additional Program or
Erase command except the Program/Erase
Suspend command. When Ready/Busy is High,
V
or Erase operation.
IC
A0-A10
DQ0-DQ7
G
W
RC
RB
RP
V
V
V
NC
OH
CC
PP
SS
, the memory is ready for any Read, Program
Address Inputs
Interface Configuration
Data Inputs/Outputs
Output Enable
Write Enable
Row/Column Address Select
Ready/Busy Output
Interface Reset
Supply Voltage
Optional Supply Voltage for Fast
Program and Fast Erase Operations
Ground
Not Connected Internally
M50LPW040
OL
Row/
, the
5/36