PMZ270XN NXP Semiconductors, PMZ270XN Datasheet
PMZ270XN
Related parts for PMZ270XN
PMZ270XN Summary of contents
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... PMZ270XN N-channel TrenchMOS extremely low level FET Rev. 01. — 21 February 2008 BOTTOM VIEW BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Profi lower than SOT23 I Low on-state resistance ...
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... C; pulsed see see Figure pulsed human body model 100 pF 1.5 k machine model 200 pF Rev. 01 — 21 February 2008 PMZ270XN Min - - - Figure 2 and 3 - Figure 2 - Figure © NXP B.V. 2008. All rights reserved. Version ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature Limit R Limit DSon DSon Rev. 01 — 21 February 2008 PMZ270XN 03aa25 50 100 150 ------------------- - 100 % 003aac204 003aac204 ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMZ270XN_1 Product data sheet N-channel TrenchMOS extremely low level FET Conditions see Figure 4 minimum footprint - Rev. 01 — 21 February 2008 PMZ270XN Min Typ Max Unit - - 50 K/W [1] - 670 - K/W 003aab831 003aab831 t ...
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... 4.5 V; see Figure 11 and MHz; see GS DS Figure 4 0 see Figure Rev. 01 — 21 February 2008 PMZ270XN Min Typ Max and 10 0.5 1 1 100 - 10 100 and ...
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... Fig 6. Drain-source on-state resistance as a function 03am98 03am98 150 C = 150 (V) ( > DSon Fig 8. Normalized drain-source on-state resistance Rev. 01 — 21 February 2008 PMZ270XN N-channel TrenchMOS extremely low level FET 2 2 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0 0.5 0 1.5 1 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage 03an01 03an01 V V 0.6 0.6 0.8 0 (nC) (nC Fig 12. Gate charge waveform definitions Rev. 01 — 21 February 2008 PMZ270XN min typ max min typ max 0.4 0.8 1.2 0.4 0.8 1 ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PMZ270XN_1 Product data sheet 03an03 2 (pF) (pF) 2.5 3 4.5 1.5 2 2 Fig 14. Input, output and reverse transfer capacitances Rev. 01 — 21 February 2008 PMZ270XN N-channel TrenchMOS extremely low level FET ...
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... REFERENCES REFERENCES JEDEC JEITA JEDEC JEITA SC-101 SC-101 Rev. 01 — 21 February 2008 PMZ270XN N-channel TrenchMOS extremely low level FET 0.5 0 0.5 scale scale EUROPEAN EUROPEAN PROJECTION PROJECTION SOT883 SOT883 ISSUE DATE ISSUE DATE 03-02-05 03-02-05 03-04-03 03-04-03 © NXP B.V. 2008. All rights reserved. ...
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... R = 0.05 ( 0.05 (12 ) 0.60 0.70 0.80 0.60 0.70 0.80 0.30 0.30 0.30 0. 0.40 0.40 0.40 0. 0.50 0.50 mbl873 mbl873 0.50 0. Rev. 01 — 21 February 2008 PMZ270XN N-channel TrenchMOS extremely low level FET solder lands solder lands solder resist solder resist occupied area occupied area solder paste solder paste © NXP B.V. 2008. All rights reserved ...
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... Revision history Table 6. Revision history Document ID Release date PMZ270XN_1 20080221 PMZ270XN_1 Product data sheet N-channel TrenchMOS extremely low level FET Data sheet status Change notice Product data sheet - Rev. 01 — 21 February 2008 PMZ270XN Supersedes - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 21 February 2008 PMZ270XN © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMZ270XN All rights reserved. Date of release: 21 February 2008 Document identifier: PMZ270XN_1 ...