PMZ270XN NXP Semiconductors, PMZ270XN Datasheet - Page 5

• Manufacturer Part Number: PMZ270XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
PMZ270XN_1
Product data sheet
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
= 25 C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Characteristics
Conditions
I
I
V
V
V
V
I
Figure 11
V
Figure 14
V
I
D
D
D
S
DS
GS
GS
GS
GS
DS
T
T
T
T
T
T
T
T
T
= 0.3 A; V
= 10 A; V
= 0.25 mA; V
= 1 A; V
j
j
j
j
j
j
j
j
j
= 20 V; V
= 10 V; R
= 12 V; V
= 4.5 V; I
= 2.5 V; I
= 0 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
Rev. 01 — 21 February 2008
and
DS
GS
DS
GS
D
D
= 10 V; V
GS
L
12
DS
= 0.2 A; see
= 0.1 A; see
= 10 ; V
= 0 V; see
DS
= 20 V; f = 1 MHz; see
= 0 V
= 0 V
= 0 V
= V
GS
GS
; see
N-channel TrenchMOS extremely low level FET
GS
= 4.5 V; see
Figure 13
= 4.5 V; R
Figure 6
Figure 6
Figure 9
and
and
G
and
= 6
8
8
10
Min
20
18
0.5
0.35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMZ270XN
Typ
-
-
1
-
-
-
-
10
270
430
440
0.72
0.18
0.18
34
12
8
5
11
11
6
0.8
© NXP B.V. 2008. All rights reserved.
Max
-
-
1.5
-
1.8
1
100
100
340
540
520
-
-
-
-
-
-
-
-
-
-
1.2
5 of 13
Unit
V
V
V
V
V
nA
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
A
A