PMZ270XN NXP Semiconductors, PMZ270XN Datasheet - Page 3

• Manufacturer Part Number: PMZ270XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMZ270XN_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(%)
(A)
(A)
I
I
10
10
10
10
der
D
D
120
10
10
10
10
80
40
0
1
1
2
2
1
1
2
2
10
10
function of solder point temperature
T
P
0
sp
der
1
1
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
DM
tot
is single pulse
100 %
100
150
T
sp
1
1
03aa17
( C)
Rev. 01 — 21 February 2008
Limit R
Limit R
200
DSon
DSon
= V
= V
DS
DS
Fig 2. Normalized continuous drain current as a
/ I
/ I
D
D
(%)
I
der
N-channel TrenchMOS extremely low level FET
120
DC
DC
80
40
0
function of solder point temperature
I
0
der
=
10
10
------------------- -
I
D 25 C
I
50
D
100 %
100 s
100 s
1 ms
1 ms
10 ms
10 ms
100 ms
100 ms
t
t
p
p
100
= 10 s
= 10 s
V
V
DS
DS
(V)
(V)
PMZ270XN
150
© NXP B.V. 2008. All rights reserved.
T
003aac204
003aac204
sp
03aa25
( C)
200
10
10
2
2
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