PMZ270XN NXP Semiconductors, PMZ270XN Datasheet - Page 9

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PMZ270XN

Manufacturer Part Number
PMZ270XN
Description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
7. Package outline
Fig 15. Package outline SOT883 (SC-101)
PMZ270XN_1
Product data sheet
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
DIMENSIONS (mm are the original dimensions)
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
Note
1. Including plating thickness
UNIT
UNIT
mm
mm
VERSION
OUTLINE
VERSION
OUTLINE
SOT883
SOT883
A
0.50
0.46
A
0.50
0.46
(1)
(1)
max.
max.
0.03
0.03
A
e
e
A
1
1
b
b
0.20
0.12
0.20
0.12
2
1
b
2
1
b
IEC
IEC
0.55
0.47
0.55
0.47
b
b
1
1
L
L
0.62
0.55
0.62
0.55
D
D
1.02
0.95
1.02
0.95
E
E
JEDEC
JEDEC
e 1
e 1
E
E
0.35
0.35
e
e
REFERENCES
REFERENCES
Rev. 01 — 21 February 2008
0.65
0.65
e
e
1
1
L 1
L 1
0.30
0.22
0.30
0.22
SC-101
L
SC-101
L
JEITA
JEITA
3
3
0.30
0.22
0.30
0.22
L
L
A 1
A 1
D
D
1
1
b 1
b 1
N-channel TrenchMOS extremely low level FET
A
A
0
0
PROJECTION
PROJECTION
EUROPEAN
EUROPEAN
scale
scale
0.5
0.5
PMZ270XN
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
ISSUE DATE
03-02-05
03-04-03
03-02-05
03-04-03
1 mm
1 mm
SOT883
SOT883
9 of 13

Related parts for PMZ270XN