PMZ270XN NXP Semiconductors, PMZ270XN Datasheet - Page 6

• Manufacturer Part Number: PMZ270XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMZ270XN_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
(A)
(A)
I
I
I
I
D
D
D
D
2.5
2.5
1.5
1.5
0.5
0.5
2.5
2.5
1.5
1.5
0.5
0.5
2
2
1
1
0
0
2
2
1
1
0
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
0
0
0
j
j
= 25 C
= 25 C and 150 C; V
V
V
DS
DS
> I
> I
D
D
1
1
0.5
0.5
R
R
DSon
DSon
4.5 V
4.5 V
2
2
25 C
25 C
1
1
3.5 V
3.5 V
DS
> I
3
3
D
T
T
j
j
R
1.5
1.5
= 150 C
= 150 C
V
V
DSon
DS
DS
4
4
V
V
V
V
DS
DS
= 1.8 V
= 1.8 V
GS
GS
03am96
03am96
03am98
03am98
2.5 V
2.5 V
3 V
3 V
2 V
2 V
(V)
(V)
(V)
(V)
Rev. 01 — 21 February 2008
2
2
5
5
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
R
DSon
DSon
( )
( )
N-channel TrenchMOS extremely low level FET
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
a
a
1.5
1.5
0.5
0.5
1
1
0
0
2
2
1
1
0
0
T
of drain current; typical values
factor as a function of junction temperature
a
-60
-60
0
0
j
= 25 C
=
----------------------------- -
R
DSon 25 C
R
0.5
0.5
DSon
0
0
V
V
GS
GS
1
1
= 2.5 V
= 2.5 V
60
60
1.5
1.5
PMZ270XN
120
120
© NXP B.V. 2008. All rights reserved.
2
2
3 V
3 V
T
T
j
j
I
I
D
D
03af18
03af18
( C)
( C)
03am97
03am97
3.5 V
3.5 V
4.5 V
4.5 V
(A)
(A)
180
180
2.5
2.5
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