PMZ270XN NXP Semiconductors, PMZ270XN Datasheet - Page 4

• Manufacturer Part Number: PMZ270XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 4.
[1]
PMZ270XN_1
Product data sheet
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
th(j-sp)
th(j-a)
Mounted on a printed-circuit board; vertical in still air.
Z
Z
(K/W)
(K/W)
th(j-sp)
th(j-sp)
10
10
10
10
2
2
1
1
10
10
thermal resistance from junction to solder point
thermal resistance from junction to ambient
-4
-4
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.02
single pulse
single pulse
Thermal characteristics
= 0.5
= 0.5
10
10
-3
-3
Rev. 01 — 21 February 2008
10
10
-2
-2
Conditions
see
minimum footprint
Figure 4
N-channel TrenchMOS extremely low level FET
10
10
-1
-1
1
1
[1]
P
P
Min
-
-
PMZ270XN
t
t
p
p
T
T
t
t
p
p
Typ
-
670
© NXP B.V. 2008. All rights reserved.
(s)
(s)
003aab831
003aab831
=
=
T
T
t
t
p
p
t
t
Max
50
-
10
10
4 of 13
Unit
K/W
K/W