PMZ270XN NXP Semiconductors, PMZ270XN Datasheet - Page 2

• Manufacturer Part Number: PMZ270XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMZ270XN_1
Product data sheet
Type number
PMZ270XN
CAUTION
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Electrostatic discharge
V
D
DM
S
SM
stg
j
DS
DGR
GS
tot
esd
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
electrostatic discharge voltage all pins
Ordering information
Limiting values
Package
Name
SC-101
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20 , IEC/ST 61340-5 , JESD625-A or
equivalent standards.
Description
leadless ultra small plastic package; 3 solder lands;
body 1.0
Conditions
25 C
25 C
T
T
T
T
-
-
T
T
human body model; C = 100 pF; R = 1.5 k
machine model; C = 200 pF
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
0.6
Rev. 01 — 21 February 2008
T
T
0.5 mm
j
j
150 C
150 C; R
GS
GS
Figure 1
= 4.5 V; see
= 4.5 V; see
p
p
GS
10 s; see
10 s
= 20 k
N-channel TrenchMOS extremely low level FET
Figure 2
Figure 2
Figure 3
and
3
PMZ270XN
Min
-
-
-
-
-
-
-
-
-
-
-
55
55
© NXP B.V. 2008. All rights reserved.
Max
20
20
2.15
1.36
4.30
2.50
+150
+150
2.15
4.30
65
35
12
Version
SOT883
2 of 13
Unit
V
V
V
A
A
A
W
A
A
V
V
C
C