PMZ270XN NXP Semiconductors, PMZ270XN Datasheet - Page 7

• Manufacturer Part Number: PMZ270XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMZ270XN_1
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate
V
V
GS (th)
GS (th)
V
V
(V)
(V)
(V)
(V)
GS
GS
1.5
1.5
0.5
0.5
2
2
1
1
0
0
5
5
4
4
3
3
2
2
1
1
0
0
I
junction temperature
I
charge; typical values
D
D
60
60
0
0
= 1 mA; V
= 1 A; V
I
I
T
T
V
V
D
D
j
j
DS
DS
= 25 C
= 25 C
= 1 A
= 1 A
= 10 V
= 10 V
DS
0.2
0.2
0
0
DS
= 10 V
= V
GS
0.4
0.4
60
60
max
max
typ
typ
min
min
120
120
0.6
0.6
Q
Q
T
T
G
G
j
j
( C)
( C)
(nC)
(nC)
03an01
03an01
03al82
03al82
Rev. 01 — 21 February 2008
180
180
0.8
0.8
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
(A)
I
I
10
10
10
10
10
10
10
10
N-channel TrenchMOS extremely low level FET
D
D
3
3
4
4
5
5
6
6
T
gate-source voltage
0
0
j
V
V
= 25 C; V
V
V
V
V
V
V
GS(pl)
GS(pl)
DS
GS(th)
GS
DS
GS(th)
GS
0.4
0.4
Q
min
min
Q
DS
GS1
GS1
= 5 V
I
Q
I
Q
D
D
GS
GS
Q
Q
GS2
GS2
0.8
0.8
Q
Q
G(tot)
G(tot)
typ
typ
Q
Q
PMZ270XN
GD
GD
1.2
1.2
© NXP B.V. 2008. All rights reserved.
V
V
003aaa508
003aaa508
GS
GS
max
max
03an65
03an65
(V)
(V)
1.6
1.6
7 of 13