MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 13

• Manufacturer Part Number: MBM29SL160TD
• Description: Flash Memory 16m 2m X 8/1m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

Read Mode
Standby Mode
Automatic Sleep Mode
Output Disable
Autoselect
The MBM29SL160TD/BD have two control functions which must be satisfied in order to obtain data at the outputs.
CE is the power control and should be used for a device selection. OE is the output control and should be used
to gate data to the output pins if a device is selected.
Address access time (t
access time (t
enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
addresses have been stable for at least t
power-up, it is necessary to input hardware reset or to change CE pin from “H” to “L”
There are two ways to implement the standby mode on the MBM29SL160TD/BD devices, one using both the
CE and RESET pins; the other via the RESET pin only.
When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V
Under this condition the current consumed is less than 5 A max. During Embedded Algorithm operation, V
active current (I
of these standby modes.
When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at V
= “H” or “L”). Under this condition the current is consumed is less than 5 A max. Once the RESET pin is taken
high, the device requires t
In the standby mode the outputs are in the high impedance state, independent of the OE input.
There is a function called automatic sleep mode to restrain power consumption during read-out of
MBM29SL160TD/BD data. This mode can be used effectively with an application requested low power
consumption such as handy terminals.
To activate this mode, MBM29SL160TD/BD automatically switch themselves to low power mode when
MBM29SL160TD/BD addresses remain stably during access fine of 150 ns. It is not necessary to control CE,
WE, and OE on the mode. Under the mode, the current consumed is typically 1 A (CMOS Level).
During simultaneous operation, V
Since the data are latched during this mode, the data are read-out continuously. If the addresses are changed,
the mode is canceled automatically and MBM29SL160TD/BD read-out the data for changed addresses.
With the OE input at a logic high level (V
to be in a high impedance state.
The autoselect mode allows the reading out of a binary code from the devices and will identify its manufacturer
and type. This mode is intended for use by programming equipment for the purpose of automatically matching
the devices to be programmed with its corresponding programming algorithm. This mode is functional over the
entire temperature range of the devices.
To activate this mode, the programming equipment must force V
bytes may then be sequenced from the devices outputs by toggling address A
DON’T CARES except A
FUNCTIONAL DESCRIPTION
CE
CC2
) is the delay from stable addresses and stable CE to valid data at the output pins. The output
) is required even CE = “H”. The device can be read with standard access time (t
ACC
0
MBM29SL160TD
, A
) is equal to the delay from stable addresses to valid output data. The chip enable
RH
1
of wake up time before outputs are valid for read access.
, and A
CC
active current (I
6
(A
ACC
IH
-1
), output from the devices are disabled. This will cause the output pins
). (See Tables 4 and 5.)
-t
OE
time.) When reading out a data without changing addresses after
CC2
) is required.
-10/-12
ID
(10 V to 11 V) on address pin A
/MBM29SL160BD
0
from V
IL
to V
IH
. All addresses are
9
SS
. Two identifier
CE
) from either
± 0.3 V (CE
CC
± 0.3 V.
-10/-12
CC
13