MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 56

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MBM29SL160TD

Manufacturer Part Number
MBM29SL160TD
Description
Flash Memory 16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
56
MBM29SL160TD
Note:
Note: Test conditions T
Note: Test conditions T
Sector Erase Time
Word Programming Time
Byte Programming Time
Chip Programming Time
Program/Erase Cycle
Parameter
Parameter
TSOP(I) PIN CAPACITANCE
FBGA PIN CAPACITANCE
ERASE AND PROGRAMMING PERFORMANCE
C
C
C
C
C
C
Symbol
Symbol
IN
OUT
IN2
IN
OUT
IN2
Parameter
Input Capacitance
Output Capacitance
Control Pin Capacitance
Input Capacitance
Output Capacitance
Control Pin Capacitance
Parameter Description
Parameter Description
A
A
= 25°C , f = 1.0 MHz
= 25°C , f = 1.0 MHz
-10/-12
100,000
Min.
/MBM29SL160BD
Limits
Typ.
14.6
10.6
15.4
1.5
V
V
V
V
V
V
OUT
OUT
IN
IN
IN
IN
= 0
= 0
= 0
= 0
= 0
= 0
Test Setup
Test Setup
Max.
360
300
160
20
cycles
Unit
sec
sec
s
s
-10/-12
Typ.
Typ.
7.5
7.5
8
8
8
8
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Comments
Max.
Max.
9.5
9.5
10
13
10
13
Unit
Unit
pF
pF
pF
pF
pF
pF

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