MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 27

no-image

MBM29SL160TD

Manufacturer Part Number
MBM29SL160TD
Description
Flash Memory 16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
Write Pulse “Glitch” Protection
Logical Inhibit
Power-Up Write Inhibit
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Writing is inhibited by holding any one of OE = V
must be a logical zero while OE is a logical one.
Power-up of the devices with WE = CE = V
The internal state machine is automatically reset to the read mode on power-up.
MBM29SL160TD
IL
and OE = V
IL
, CE = V
IH
will not accept commands on the rising edge of WE.
IH
-10/-12
, or WE = V
/MBM29SL160BD
IH
. To initiate a write cycle CE and WE
-10/-12
27

Related parts for MBM29SL160TD