MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 37

no-image

MBM29SL160TD

Manufacturer Part Number
MBM29SL160TD
Description
Flash Memory 16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
Notes: 1. PA is address of the memory location to be programmed.
Addresses
CE
OE
WE
Data
2. PD is data to be programmed at byte address.
3. DQ
4. D
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.)
Figure 6
OUT
t
7
GHWL
is the output of the complement of the data written to the device.
is the output of the data written to the device.
3rd Bus Cycle
AC Waveforms for Alternate WE Controlled Program Operations
MBM29SL160TD
t
555H
CS
t
WC
t
t
A0H
DS
WP
t
t
WPH
DH
t
t
AS
CH
PA
t
PD
AH
Data Polling
t
WHWH1
-10/-12
DQ
PA
7
/MBM29SL160BD
D
OUT
t
t
CE
RC
t
OE
D
OUT
t
OH
-10/-12
37

Related parts for MBM29SL160TD