MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 19

• Manufacturer Part Number: MBM29SL160TD
• Description: Flash Memory 16m 2m X 8/1m X 16 Bit
• Manufacturer: Fujitsu Microelectronics, Inc.

Read/Reset Command
Autoselect Command
Byte/Word Programming
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the
read mode. Table 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both
Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that
commands are always written at DQ
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
Reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
Following the command write, a read cycle from address (XX)00H retrieves the manufacture code of 04H. A
read cycle from address (XX)01H for 16((XX)02H for 8) returns the device code (MBM29SL160TD = E4H and
MBM29SL160BD = E7H for 8 mode; MBM29SL160TD = 22E4H and MBM29SL160BD = 22E7H for 16 mode),
(See Tables 6.1 and 6.2.)
All manufacturer and device codes will exhibit odd parity with DQ
or unprotection) will be informed by address (XX)02H for 16 ((XX)04H for 8). Scanning the sector group
addresses (A
output DQ
group protection on the protected sector. (See Tables 4 and 5.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command
sequence.
The devices are programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle
operation. There are two “unlock” write cycles. These are followed by the program set-up command and data
write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is
latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever
happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence,
the system is not required to provide further controls or timings. The device will automatically provide adequate
internally generated program pulses and verify the programmed cell margin.
Command Definitions
0
for a protected sector group. The programming verification should be performed by verify sector
19
, A
18
, A
17
, A
MBM29SL160TD
16
, A
15
, A
14
, A
0
to DQ
13
, and A
7
and DQ
12
) while (A
8
to DQ
6
, A
-10/-12
15
1
, A
7
bits are ignored.
9
defined as the parity bit. Sector state (protection
to a high voltage. However, multiplexing high
0
) = (0, 1, 0) will produce a logical “1” at device
/MBM29SL160BD
5
= 1) to Read/Reset mode, the Read/
-10/-12
19