MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 38

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MBM29SL160TD

Manufacturer Part Number
MBM29SL160TD
Description
Flash Memory 16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
38
MBM29SL160TD
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
4. D
5. Figure indicates last two bus cycles out of four bus cycle sequence.
6. These waveforms are for the 16 mode. (The addresses differ from 8 mode.)
Figure 7
Addresses
OUT
7
WE
OE
CE
Data
is the output of the complement of the data written to the device.
is the output of the data written to the device.
AC Waveforms for Alternate CE Controlled Program Operations
-10/-12
t
t
WS
GHEL
3rd Bus Cycle
555H
/MBM29SL160BD
t
WC
t
A0H
t
DS
CP
t
CPH
t
t
t
AS
WH
DH
PA
t
PD
AH
Data Polling
t
WHWH1
DQ
-10/-12
PA
7
D
OUT

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