MBM29SL160TD Fujitsu Microelectronics, Inc., MBM29SL160TD Datasheet - Page 8

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MBM29SL160TD

Manufacturer Part Number
MBM29SL160TD
Description
Flash Memory 16m 2m X 8/1m X 16 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
8
MBM29SL160TD
Ordering Part No.
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
BLOCK DIAGRAM
PRODUCT LINE UP
A
0
WP/ACC
RESET
to A
V
V
BYTE
CC
SS
CE
OE
A
WE
-1
19
Part No.
Low V
Command
Register
RY/BY
Control
Buffer
State
CC
Detector
-10/-12
V
CC
= 2.0 V±0.2V
RY/BY
/MBM29SL160BD
Program Voltage
Program/Erase
Generator
Timer for
Erase Voltage
Generator
STB
Address
Latch
MBM29SL160TD/MBM29SL160BD
Output Enable
Chip Enable
100
100
-10
35
Logic
Y-Decoder
X-Decoder
-10/-12
STB
DQ
Input/Output
Data Latch
Cell Matrix
Y-Gating
Buffers
0
to DQ
120
120
-12
50
15

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