MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 18

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 12: TAP DC Electrical Characteristics
Notes 1, 2; 0ºC £ T
NOTE:
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
1.
2. Test conditions are specified using the load in Figure 10.
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
TCK LOW to TDO unknown
TCK LOW to TDO valid
TDI valid to TCK HIGH
TCK HIGH to TDI invalid
Setup Times
TMS setup
Capture setup
Hold Times
TMS hold
Capture hold
t
CS and
DD
t
, HSTL, QDRb4 SRAM
CH refer to the setup and hold time requirements of latching data from the boundary scan register.
A
£ +70ºC; +2.4V £ V
Test Mode Select
Test Data-Out
Test Data-In
Test Clock
(TDO)
(TMS)
(TCK)
(TDI)
DD
£ +2.6V
1
t MVTH
t DVTH
0.16µm Process
TAP Timing
2
t THTL
t THMX
t THDX
Figure 9:
18
t
TLTH
3
t THTH
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DON’T CARE
SYMBOL
4
t
t
t
t
t
t
t
t
t
MVTH
THMX
THTH
DVTH
THDX
TLOX
TLOV
THTL
TLTH
t
f
t
CH
TF
CS
DD
t TLOX
t TLOV
, HSTL, QDRb4 SRAM
5
UNDEFINED
MIN
100
40
40
10
10
10
10
10
10
0
6
512K x 18
MAX
10
20
©2002, Micron Technology Inc.
ADVANCE
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns