MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 20

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 13: Identification Register Definitions
Table 14: Scan Register Sizes
Table 15: Instruction Codes
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
INSTRUCTION FIELD
REGISTER NAME
INSTRUCTION
REVISION NUMBER (31:28)
DEVICE ID (28:12)
MICRON JEDEC ID CODE
(11:1)
ID Register Presence
Indicator (0)
Instruction
Bypass
ID
Boundary Scan
EXTEST
IDCODE
SAMPLE Z
RESERVED
SAMPLE/PRELOAD
RESERVED
RESERVED
BYPASS
DD
, HSTL, QDRb4 SRAM
00011000011000000 512K x 18 QDR 4-word burst.
BIT SIZE (x18)
00000101100
512K x 18
CODE
000
000
001
010
011
100
101
110
111
32
69
1
3
1
0.16µm Process
DESCRIPTION
Version number.
Allows unique identification of SRAM vendor.
Indicates the presence of an ID register.
DESCRIPTION
Captures I/O ring contents. Places the boundary scan register
between TDI and TDO. This operation does not affect SRAM
operations. This instruction is not 1149.1-compliant.
Loads the ID register with the vendor ID code and places the register
between TDI and TDO. This operation does not affect SRAM
operations.
Captures I/O ring contents. Places the boundary scan register
between TDI and TDO. Forces all SRAM output drivers to a High-Z
state.
Do Not Use: This instruction is reserved for future use.
Captures I/O ring contents. Places the boundary scan register
between TDI and TDO. Does not affect SRAM operations. This
instruction does not implement 1149.1 preload function and is
therefore not 1149.1-compliant.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does
not affect SRAM operations.
20
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
, HSTL, QDRb4 SRAM
512K x 18
©2002, Micron Technology Inc.
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