MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 22

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
DATA SHEET DESIGNATION
Micron and the M logo are registered trademarks and the Micron logo is a trademark of Micron Technology, Inc. QDR RAMs and Quad Data
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
1. All dimensions are in millimeters.
SOLDER BALL DIAMETER REFERS
TO POST REFLOW CONDITION. THE
PRE-REFLOW DIAMETER IS Ø 0.40
E-mail: [e-mail], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, Micron Technology, Inc., NEC, and Samsung.
Advance: This data sheet contains initial descriptions of products still under development.
DD
15.00 ±0.10
, HSTL, QDRb4 SRAM
165X Ø 0.45
BALL A11
7.50 ±0.05
7.00 ±0.05
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: [phone]
0.85 ±0.075
5.00 ±0.05
13.00 ±0.10
10.00
6.50 ±0.05
1.00
TYP
165-Ball FBGA
0.16µm Process
Figure 11:
C
1.00
TYP
22
BALL A1
PIN A1 ID
14.00
SEATING PLANE
0.12 C
®
2.5V V
1.20 MAX
DD
, HSTL, QDRb4 SRAM
MOLD COMPOUND: EPOXY NOVOLAC
SUBSTRATE: PLASTIC LAMINATE
SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb
SOLDER BALL PAD: Ø .33mm
PIN A1 ID
512K x 18
©2002, Micron Technology Inc.
ADVANCE