MT54V512H18E Micron Semiconductor Products, Inc., MT54V512H18E Datasheet - Page 21

• Manufacturer Part Number: MT54V512H18E
• Description: 9Mb QDR SRAM, 2.5V Vdd, HSTL , 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 16: Boundary Scan (Exit) Order
512K x 18, 2.5V V
MT54V512H18E_16_A.fm - Rev 10/02
BIT#
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
1
2
3
4
5
6
7
8
9
DD
, HSTL, QDRb4 SRAM
SIGNAL NAME
GND/SA20
Reserved
NC/SA18
D0
Q0
D1
Q1
D2
Q2
D3
Q3
D4
ZQ
Q4
D5
Q5
D6
Q6
D7
Q7
D8
Q8
NC
C#
SA
SA
SA
SA
SA
SA
SA
SA
SA
R#
C
11A; reads as X
10A; reads as 0
9A; reads as 1
6C; reads as 0
BALL ID
10M
11M
11N
11H
11G
11D
10K
11K
10C
11C
11B
10P
11P
11L
11F
10E
11E
11J
10J
6N
7N
8A
6R
6P
7P
7R
8R
8P
9R
8B
7C
0.16µm Process
21
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BIT#
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
DD
SIGNAL NAME
, HSTL, QDRb4 SRAM
GND/SA21
Reserved
NC/SA19
BW0#
BW1#
Q10
Q11
Q12
Q13
Q14
Q15
Q16
Q17
D10
D11
D12
D13
D14
D15
D16
D17
W#
K#
SA
SA
D9
Q9
SA
SA
SA
SA
SA
SA
K
512K x 18
1A; reads as X
3A; reads as 1
2A; reads as 0
©2002, Micron Technology Inc.
BALL ID
ADVANCE
3M
6A
5A
4A
3D
2D
2G
3G
3N
2N
5N
7B
6B
5C
4B
3B
2B
3C
3K
3R
4R
5R
3E
3F
2F
3L
2L
3P
4P
5P
3J