MT55L1MY18F Micron Semiconductor Products, Inc., MT55L1MY18F Datasheet - Page 13

• Manufacturer Part Number: MT55L1MY18F
• Description: 18Mb ZBT SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

Absolute Maximum Ratings
3.3V V
Voltage on V
Relative to V
Voltage on V
Relative to V
V
V
Storage Temperature (TQFP) . . . . . . . . .-55°C to +150°C
Storage Temperature (FBGA) . . . . . . . . .-55°C to +125°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Short Circuit Output Current . . . . . . . . . . . . . . . . .100mA
2.5V V
Voltage on V
Relative to V
Voltage on V
to V
V
V
Storage Temperature (TQFP) . . . . . . . . .-55°C to +150°C
Storage Temperature (FBGA)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Short Circuit Output Current . . . . . . . . . . . . . . . . .100mA
Table 8:
Notes appear following parameter tables on page 18; 0ºC £ T
noted
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
IN
IN
IN
IN
(DQs) . . . . . . . . . . . . . . . . . . . . . -0.5V to V
(Inputs) . . . . . . . . . . . . . . . . . . . . -0.5V to V
SS
(DQs) . . . . . . . . . . . . . . . . . . . . . -0.3V to V
(Inputs) . . . . . . . . . . . . . . . . . . . . -0.3V to V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DD
DD
DD
SS
DD
SS
DD
SS
DD
3.3V V
Q Supply
Q Supply Relative
. . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V
. . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to V
. . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
Supply
Supply
DD
, 3.3V I/0 DC Electrical Characteristics and Operating Conditions
-55°C to +125°C
Output(s) disabled,
0V £ V
0V £ V
CONDITIONS
I
OH
I
DD
DD
OL
DD
DD
= -4.0mA
Q + 0.5V
Q + 0.3V
= 8.0mA
IN
IN
+ 0.5V
+ 0.3V
£ V
£ V
DD
DD
DD
13
A
£ +70ºC; V
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
cycle time, loading, ambient temperature, and airflow.
18Mb: 1 MEG x 18, 512K x 32/36
SYMBOL
Stresses greater than those listed may cause perma-
Junction temperature depends upon package type,
V
V
V
V
V
IL
V
DD
IL
OH
OL
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IH
IL
O
I
Q
DD
FLOW-THROUGH ZBT SRAM
and V
3.135
3.135
MIN
-0.3
-1.0
-1.0
2.0
2.4
DD
Q = 3.3V ±0.165V unless otherwise
V
DD
MAX
3.465
V
0.8
1.0
1.0
0.4
DD
+ 0.3
UNITS
µA
µA
V
V
V
V
V
V
©2003 Micron Technology, Inc.
NOTES
1, 2
1, 2
1, 5
4
1
1
1