MT55L1MY18F Micron Semiconductor Products, Inc., MT55L1MY18F Datasheet - Page 21

• Manufacturer Part Number: MT55L1MY18F
• Description: 18Mb ZBT SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time the ZZ is in a HIGH state.
After the device enters SNOOZE MODE, all inputs
except ZZ become disabled and all outputs go
to High-Z.
Table 18: SNOOZE MODE Electrical Characteristics
NOTE:
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
1. This parameter is sampled.
Outputs (Q)
SNOOZE MODE is a low-current, power-down
ALL INPUTS
(except ZZ)
I
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t
ZZI
t ZZ
I
ISB2Z
SNOOZE MODE Waveform
CONDITIONS
ZZ ³ V
Figure 10:
IH
21
High-Z
causes the device to enter SNOOZE MODE. When the
ZZ becomes a logic HIGH, I
time
ing when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed. Similarly, when exiting
SNOOZE MODE during
READ cycle should be given.
18Mb: 1 MEG x 18, 512K x 32/36
The ZZ is an asynchronous, active HIGH input that
SYMBOL
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ZZI is met. Any READ or WRITE operation pend-
t
I
t
t
RZZI
SB2Z
t
RZZ
ZZI
ZZ
FLOW-THROUGH ZBT SRAM
t
KHKH
MIN
0
DESELECT or READ Only
t
RZZI
t
t
t
MAX
KHKH
KHKH
RZZ, only a DESELECT or
SB
30
2
Z
t
RZZ
is guaranteed after the
UNITS
mA
ns
ns
ns
ns
©2003 Micron Technology, Inc.
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NOTES
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