MT55L256L32F Micron Semiconductor Products, Inc., MT55L256L32F Datasheet - Page 15

• Manufacturer Part Number: MT55L256L32F
• Description: 8Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
V
Storage Temperature (TQFP) ............ -55°C to +150°C
Storage Temperature (FBGA) ........... -55°C to +125°C
Junction Temperature** ................................... +150°C
Short Circuit Output Current .......................... 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0° C
NOTE: 1. All voltages referenced to V
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
IN
DESCRIPTION
Input High (Logic 1) Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
Relative to V
Relative to V
............................................... -0.5V to V
T
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
Undershoot:
Power-up:
curves are available upon request.
DD
+70° C; V
Q should never exceed V
DD
DD
Q Supply
SS
SS
Supply
.................................. -0.5V to +4.6V
..................................... -0.5V to V
DD
, V
V
V
V
IH
IL
IH
DD
-0.7V for t
OH
+4.6V for t
+3.465V and V
Q = +3.3V ±0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
SS
DD
(GND).
. V
t
Output(s) disabled,
t
KHKH/2 for I
DD
KHKH/2 for I
DD
0V
0V
CONDITIONS
and V
I
I
OH
OL
DD
DQ pins
+3.135V for t
= -4.0mA
Q + 0.5V
= 8.0mA
V
V
DD
IN
IN
Q can be externally wired together to the same power supply.
V
V
DD
20mA
20mA
DD
DD
15
200ms
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature, and airflow.
See Micron Technical Note TN-05-14 for more
information.
SYMBOL
8Mb: 512K x 18, 256K x 32/36
V
V
V
V
V
V
IL
V
DD
IL
OH
DD
OL
IH
IH
IL
O
I
FLOW-THROUGH ZBT SRAM
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
3.135
MIN
-0.3
-1.0
-1.0
2.0
2.0
2.4
V
V
DD
DD
MAX
3.465
V
0.8
1.0
1.0
0.4
+ 0.3
+ 0.3
DD
UNITS
µA
µA
V
V
V
V
V
V
V
©2002, Micron Technology, Inc.
NOTES
1, 2
1, 2
1, 2
1, 4
1, 4
1, 5
3
1