MT55L256L32F Micron Semiconductor Products, Inc., MT55L256L32F Datasheet - Page 16

• Manufacturer Part Number: MT55L256L32F
• Description: 8Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0° C
TQFP CAPACITANCE
FBGA CAPACITANCE
NOTE: 1. All voltages referenced to V
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
DESCRIPTION
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
T
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. This parameter is sampled.
A
Undershoot:
Power-up:
+70° C; V
DD
V
V
V
= +3.3V ±0.165V; V
IH
IL
IH
-0.7V for t
+4.6V for t
+3.465V and V
SS
(GND).
T
0V
A
t
Output(s) disabled,
t
KHKH/2 for I
KHKH/2 for I
= +25° C; f = 1 MHz
DD
Data bus (DQx)
0V
CONDITIONS
CONDITIONS
I
I
V
I
I
DD
OH
OH
V
OL
OL
IN
T
+3.135V for t
DD
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
Inputs
= -2.0mA
= -1.0mA
A
= 2.0mA
= 1.0mA
V
= 3.3V
= 25° C; f = 1 MHz
V
IN
CONDITIONS
DD
Q (DQx)
V
20mA
20mA
DD
16
200ms
SYMBOL
SYMBOL
8Mb: 512K x 18, 256K x 32/36
V
V
C
SYMBOL
V
V
V
C
C
V
V
V
IL
C
V
DD
IL
IH
CK
OH
OH
DD
O
A
OL
OL
IH
I
IL
O
FLOW-THROUGH ZBT SRAM
Q
I
Q
C
Micron Technology, Inc., reserves the right to change products or specifications without notice.
C
C
CK
O
I
3.135
2.375
MIN
TYP
-0.3
-1.0
-1.0
1.7
1.7
1.7
2.0
3
4
3
3
–
–
TYP
2.5
2.5
4
V
V
DD
DD
MAX
MAX
3.465
3.5
3.5
Q + 0.3
0.7
1.0
1.0
0.7
0.4
2.9
4
5
MAX
–
–
+ 0.3
3.5
3.5
5
UNITS
UNITS
UNITS
p F
p F
p F
p F
µA
µA
V
V
V
V
V
V
V
V
V
p F
p F
p F
©2002, Micron Technology, Inc.
NOTES
NOTES
NOTES
1, 2
1, 2
1, 2
1
1
1
1
3
1
1
1
1
1
1
4
4
4