MT55L256L32F Micron Semiconductor Products, Inc., MT55L256L32F Datasheet - Page 6

• Manufacturer Part Number: MT55L256L32F
• Description: 8Mb ZBT SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

TQFP PIN DESCRIPTIONS
8Mb: 512K x 18, 256K x 32/36 Flow-Through ZBT SRAM
MT55L512L18F_C.p65 – Rev. 2/02
32-35, 44-50,
80-83, 99,
x18
100
37
36
93
94
89
98
92
97
86
85
87
64
–
–
32-35, 44-50,
81-83, 99,
x32/x36
100
37
36
93
94
95
96
89
98
92
97
86
85
87
64
SYMBOL TYPE
ADV/LD# Input
BWb#
BWd#
BWa#
BWc#
CKE#
CE2#
(G#)
SA0
SA1
CLK
OE#
CE#
CE2
S A
ZZ
Input
Input
Input
Input
Input
Input
Input
Input
Input
6
Synchronous Address Inputs: These inputs are registered
and must meet the setup and hold times around the rising
edge of CLK. Pin 84 is reserved as an address bit for the
higher-density 18Mb ZBT SRAM. SA0 and SA1 are the two
least significant bits (LSB) of the address field and set the
internal burst counter if burst is desired.
cycle is active and must meet the setup and hold times
asserted on the same cycle as the address. BWa# controls
DQa pins; BWb# controls DQb pins; BWc# controls DQc
pins; BWd# controls DQd pins.
byte write enables and burst control inputs on its rising
edge. All synchronous inputs must meet setup and hold
times around the clock’s rising edge.
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW).
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW). This
input can be used for memory depth expansion.
enable the device and is sampled only when a new
external address is loaded (ADV/LD# is LOW). This
input can be used for memory depth expansion.
Output Enable: This active LOW, asynchronous input
enables the data I/O output drivers. G# is the JEDEC-
standard term for OE#.
Synchronous Address Advance/Load: When HIGH, this
input is used to advance the internal burst counter,
controlling burst access after the external address is
loaded. When ADV/LD# is HIGH, R/W# is ignored. A LOW
on ADV/LD# clocks a new address at the CLK rising edge.
Synchronous Clock Enable: This active LOW input permits
CLK to propagate throughout the device. When CKE is
HIGH, the device ignores the CLK input and effectively
internally extends the previous CLK cycle. This input must
meet setup and hold times around the rising edge of CLK.
Snooze Enable: This active HIGH, asynchronous input
causes the device to enter a low-power standby mode in
which all data in the memory array is retained. When ZZ is
active, all other inputs are ignored.
Synchronous Byte Write Enables: These active LOW
inputs allow individual bytes to be written when a WRITE
around the rising edge of CLK. BYTE WRITEs need to be
Clock: This signal registers the address, data, chip enables,
Synchronous Chip Enable: This active LOW input is used to
Synchronous Chip Enable: This active LOW input is used to
Synchronous Chip Enable: This active HIGH input is used to
8Mb: 512K x 18, 256K x 32/36
FLOW-THROUGH ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DESCRIPTION
©2002, Micron Technology, Inc.