MT57W1MH18B Micron Semiconductor Products, Inc., MT57W1MH18B Datasheet - Page 15

• Manufacturer Part Number: MT57W1MH18B
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 14: AC Electrical Characteristics and Recommended Operating Conditions
18Mb: 1.8V V
MT57W1MH18B_H.fm – Rev. H, Pub. 3/03
DESCRIPTION
CQ, CQ# HIGH
to output
valid
CQ, CQ# HIGH
to output
hold
C HIGH to
output High-Z
C HIGH to
output Low-Z
Setup Times
Address valid
to K rising
edge
Control inputs
valid to K
rising edge
Data-in valid
to K, K# rising
edge
Hold Times
K rising edge
to address
hold
K rising edge
to control
inputs hold
K, K# rising
edge to data-
in hold
DD
, HSTL, DDRIIb2 SRAM
(continued)
t
t
t
CQHQV
CQHQX -0.25
t
t
t
t
CHQX1 -0.45
t
t
t
AVKH
DVKH
KHAX
KHDX
SYM
CHQZ
IVKH
KHIX
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
0.40
0.40
0.28
0.40
0.40
0.28
-3
0.25
0.45
-0.27
-0.45
0.40
0.40
0.30
0.40
0.40
0.30
-3.3
0.27
0.45
-0.30
-0.45
0.50
0.50
0.35
0.50
0.50
0.35
-4
15
0.30
0.45
2 MEG
-0.35
-0.45
1.8V V
0.60
0.60
0.40
0.60
0.60
0.40
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
0.35
0.45
X
8, 1 MEG
DD
-0.40
-0.50
0.70
0.70
0.50
0.70
0.70
0.50
, HSTL, DDRIIb2 SRAM
-6
0.40
0.50
X
-0.40
-0.50
0.70
0.70
0.50
0.70
0.70
0.50
18, 512K
-7.5
0.40
0.50
©2003 Micron Technology, Inc.
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
X
36
23
23
16
16
16
16
16
16