MT57W1MH18B Micron Semiconductor Products, Inc., MT57W1MH18B Datasheet - Page 23

• Manufacturer Part Number: MT57W1MH18B
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

TAP AC Test Conditions
Table 16: TAP DC Electrical Characteristics and Operating Conditions
Note 2; 0°C £ T
NOTE
18Mb: 1.8V V
MT57W1MH18B_H.fm – Rev. H, Pub. 3/03
1. All voltages referenced to V
2. This table defines DC values for TAP control and data balls only. The DQ SRAM balls used in JTAG operation will have
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
Input pulse levels . . . . . . . . . . . . . . . . . . . . . V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . . . 1ns
Input timing reference levels . . . . . . . . . . . . . . . . . 0.9V
Output reference levels . . . . . . . . . . . . . . . . . . . . . . 0.9V
Test load termination supply voltage . . . . . . . . . . 0.9V
the DC values as defined in Table 9, “DC Electrical Characteristics and Operating Conditions,” on page 12.
:
DD
, HSTL, DDRIIb2 SRAM
A
£ +70°C; V
DD
= 1.8V ±0.1V unless otherwise noted
SS
(GND).
Output(s) disabled,
0V £ V
0V £ V
|I
CONDITIONS
I
|I
OHC
OLC
I
OHT
OLT
| = 100µA
= 100µA
| = 2mA
= 2mA
IN
IN
SS
£ V
£ V
to 1.8V
DD
DD
23
2 MEG
SYMBOL
V
V
V
V
V
IL
V
IL
OH 1
OH 2
1.8V V
OL 1
OL 2
IH
IL
O
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TAP AC Output Load Equivalent
X
TDO
8, 1 MEG
MIN
DD
-0.3
-5.0
-5.0
1.3
1.6
1.4
, HSTL, DDRIIb2 SRAM
Figure 10:
Z = 50Ω
V
O
DD
MAX
0.5
5.0
5.0
0.2
0.4
+ 0.3
X
18, 512K
UNITS
0.9V
µA
µA
V
V
V
V
V
V
©2003 Micron Technology, Inc.
20pF
50Ω
NOTES
X
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
36
2
2