MT58L128L32P1 Micron Semiconductor Products, Inc., MT58L128L32P1 Datasheet - Page 16

• Manufacturer Part Number: MT58L128L32P1
• Description: 4Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Pipelined, Scd,
• Manufacturer: Micron Semiconductor Products, Inc.

2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
NOTE: 1. All voltages referenced to V
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L256L18P1_F.p65 – Rev. F, Pub. 1/03 EN
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
2. Overshoot:
3. MODE has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
A
Undershoot:
Power-up:
values. AC I/O curves are available upon request.
≤ +70°C; V
DD
V
V
V
= +3.3V +0.3V/-0.165V; V
IH
IL
IH
≥ -0.7V for t ≤
≤ +4.6V for t ≤
≤ +3.6V and V
OH
, V
OL
testing is shown in Figure 4 for 2.5V I/O. AC load current is higher than the shown DC
SS
(GND).
0V ≤ V
DD
t
Output(s) disabled,
t
KC/2 for I ≤ 20mA
KC/2 for I ≤ 20mA
Data bus (DQx)
≤ 3.135V for t ≤ 200ms
CONDITIONS
0V ≤ V
I
I
I
I
OH
OH
OL
OL
IN
Inputs
= -2.0mA
= -1.0mA
= 2.0mA
= 1.0mA
≤ V
IN
DD
DD
≤ V
Q (DQx)
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
DD
16
PIPELINED, SCD SYNCBURST SRAM
SYMBOL
4Mb: 256K x 18, 128K x 32/36
V
V
V
V
V
V
V
V
IL
V
DD
IL
IH
OH
OH
DD
OL
OL
IH
IL
O
Q
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
2.375
MIN
-1.0
-0.3
-1.0
1.7
1.7
1.7
2.0
–
–
V
V
DD
DD
MAX
Q + 0.3
0.7
1.0
1.0
0.7
0.4
3.6
2.9
–
–
+ 0.3
UNITS
µA
µA
V
V
V
V
V
V
V
V
V
©2003, Micron Technology, Inc.
NOTES
1, 2
1, 2
1, 2
1, 4
1, 4
1, 4
1, 4
3
1
1