MT28F320A18 Micron Technology, MT28F320A18 Datasheet - Page 28

• Manufacturer Part Number: MT28F320A18
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
DC CHARACTERISTICS
Notes: 1. Test conditions are V
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_F.fm – Rev F 08/03 EN
PARAMETER
Input Low Voltage
Input High Voltage
Output Low Voltage
I
Output High Voltage
I
V
V
V
Input Leakage Current
Output Leakage Current
V
V
Program Current
V
V
Erase Current
V
V
V
V
V
V
V
V
V
V
V
V
V
V
4
OL
OH
PP
PP
CC
CC
CC
PP
PP
PP
PP
CC
PP
CC
PP
PP
PP
PP
PP
PP
PP
PP
PP
U
= 100µA
= 100µA
Lock Out Voltage
During Program/Erase Operations
= V
= V
= V
= V
= V
= V
Read Current
£ V
Standby Current
= V
Erase Suspend Current
= V
Program Suspend Current
= V
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Program/Erase Lock Voltage
Read Current, 70ns cycle
Standby Current
Erase Suspend Current
Program Suspend Current
CC
PP
PP
PP
PP
PP
PP
PP
PP
PP
2. APS mode reduces I
3. RP# = V
1
2
1
2
1
1
1
1
1
IH
3
or V
IL
.
1,2
CC
CC
to approximately I
= V
CC
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
(MAX), CE# = V
SYMBOL
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
V
I
PPLK
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
LKO
OZ
PP
PP
I
OH
OL
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CC
IH
L
IL
1
2
3
4
5
6
1
2
5
6
1
2
2 levels.
IL
, OE# = V
28
V
V
CC
CC
MIN
11.4
-0.2
Q - 0.2
Q - 0.1
0.9
IH
-1
-1
–
–
1
–
–
–
–
–
–
–
–
–
–
–
–
; all other inputs at V
V
V
CC
CC
Q = 1.65V–1.95V
= 1.65V–1.95V
TYP
0.5
0.5
0.5
0.5
15
25
12
25
25
–
–
–
–
–
–
–
–
–
–
9
5
5
IH
or V
V
CC
IL
MAX
.
1.95
12.6
Q + 0.2
0.2
0.1
0.4
18
50
40
40
40
40
85
85
15
1
1
5
5
5
–
–
2 MEG x 16
©2003 Micron Technology Inc.
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V