MT28F320A18 Micron Technology, MT28F320A18 Datasheet - Page 31

• Manufacturer Part Number: MT28F320A18
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
WRITE TIMING PARAMETERS
Notes: 1. The WRITE cycles for the WORD PROGRAMMING command are followed by a READ ARRAY DATA cycle.
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_F.fm – Rev F 08/03 EN
SYMBOL
t
t
t
t
t
t
t
t
4
RS
CS
WP
DS
AS
CH
DH
AH
U
.com
DQ0–DQ15
V
MIN
CC
150
A0–A20
70
70
70
0
0
0
0
Two-Cycle Programming/ERASE Operation
WP#
WE#
= 1.65V–1.95V
RP#
OE#
CE#
V
PP
V
-70
V
IPPLK
V
V
IPPH
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OL
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
MAX
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
High-Z
t
RS
VALID ADDRESS
t
CS
UNITS
DataSheet4U.com
ns
ns
ns
ns
ns
ns
ns
ns
CMD
t
DH
t
WPH
t
WP
t
31
CH
VALID ADDRESS
t
t
RHS
VPS
t
AS
SYMBOL
t
t
t
t
t
t
t
t
WPH
RHS
VPS
WOS
RHH
VPPH
WB
SRD
DATA
CMD/
t
AH
t
DS
t
WOS
t
WB
VALID ADDRESS
UNDEFINED
STATUS
t
t
RHH
VPPH
t
SRD
V
MIN
CC
200
200
30
50
0
0
= 1.65V–1.95V
-70
2 MEG x 16
t
AA+50
MAX
25
©2003 Micron Technology Inc.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns