MT28F320A18 Micron Technology, MT28F320A18 Datasheet - Page 34

• Manufacturer Part Number: MT28F320A18
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
Table 12: CFI
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_F.fm – Rev F 08/03 EN
4
OFFSET
U
03 - 0F
19, 1A
2A, 2B
2D, 2E
10, 11
13, 14
15, 16
17, 18
31, 32
33, 34
35, 36
2F, 30
.com
1D
3A
3D
00
01
12
1B
1C
1E
1F
20
21
22
23
24
25
26
27
28
29
2C
37
38
39
3B
3C
0051, 0052 “QR”
0003, 0000 Primary OEM Command Set
0035, 0000 Address for Primary Extended Table
0000, 0000 Alternate OEM Command Set
0000, 0000 Address for OEM Extended Table
0000, 0000 Maximum number of bytes in multi-byte program or page, 2
0007, 0000 Erase block region information 1, 8 blocks ...
0020, 0000 ...of 8KB
001E, 0000 63 = 3Eh for 32Mb
0000, 0001 ...64KB
0050, 0052 “PR”
reserved
C2h/C3h
DATA
0059
0017
0019
00B4
00C6
0003
0000
0009
0000
000C
0000
000C
0000
0016
0001
0000
0002
0049
0030
0031
0066
0000
0000
0000
2Ch
Manufacturer Code
32Mb Top /Bottom Boot Block Device Code
Reserved
“Y”
V
V
V
V
Typical timeout for single byte/word program, 2
Typical timeout for maximum size multiple byte/word program, 2
Typical timeout for individual block erase, 2
Typical timeout for full chip erase, 2
Maximum timeout for single byte/word program, 2
Maximum timeout for maximum size multiple byte/word program, 2
Maximum timeout for individual block erase, 2
Maximum timeout for full chip erase, 2
Device size, 2
Bus Interface x8 = 0, x16 = 1, x8/x16 = 2
Flash device interface description 0000 = async
Number of erase block regions within device (4K words and 32K words)
“I”
Major Version number ASCII
Minor version number, ASCII
Optional Feature and Command Support
Bit 0 Chip erase supported no = 0
Bit 1 Suspend erase supported = yes = 1
Bit 2 Suspend program supported = yes = 1
Bit 3 Chip lock/unlock supported = no = 0
Bit 4 Queued erase supported = no = 0
Bit 5 Instant individual block locking supported = yes = 1
Bit 6 Protection bits supported = yes = 1
Bit 7 Page mode read supported = no = 0
Bit 8 Synchronous read supported = no = 0
Bit 9 Simultaneous operation supported = no = 0
CC
CC
PP
PP
MIN for Erase/Write; Bit7–Bit4 Volts in Hex; Bit3–Bit0 100mV in BCD, 0000 = V
MAX for Erase/Write; Bit7–Bit4 Volts in Hex; Bit3–Bit0 100mV in BCD, 0000 = V
MIN for Erase/Write; Bit7–Bit4 Volts in BCD; Bit3–Bit0 100mV in BCD
MAX for Erase/Write; Bit7–Bit4 Volts in BCD; Bit3–Bit0 100mV in BCD
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
n
bytes; 0016 for 32Mb
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34
n
ms, 0000 = not supported
n
DESCRIPTION
ms, 0000 = not supported
n
ms, 0000 = not supported
n
n
ms, 0000 = not supported
µs, 0000 = not supported
n
µs, 0000 = not supported
n
n
µs, 0000 = not supported
n
µs, 0000 = not supported
2 MEG x 16
©2003 Micron Technology Inc.
PP
PP
input
input