IDT71P73804 Integrated Device Technology, IDT71P73804 Datasheet - Page 21

• Manufacturer Part Number: IDT71P73804
• Description: 1.8v 1m X 18 Ddr Ii Pipelined Sram
• Manufacturer: Integrated Device Technology

JTAG DC Operating Conditions
JTAG AC Test Conditions
JTAG Output Test Waveform
NOTE:
1. The output impedance of TDO is set to 50 ohms (nominal process) and does not vary with the
NOTE:
1. For SRAM outputs see AC test load on page 14.
JTAG Input Test Waveform
1.8 V
Output Power Supply
Power Supply Voltage
Input High Level
Input Low Level
Output High Voltage (IOH =-1mA)
Output Low Voltage (IOL = 1mA)
Input High Level
Input Low Level
Input Rise/Fall Time
Input and Output Timing Reference Level
TCK Input Leakage Current
TMS, TDI Input Leakage Current
TDO Output Leakage Current
18 Mb DDR II SRAM Burst of 4
0 V
IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit)
external resistor connected to ZQ.
Parameter
Parameter
0.9 V
0.9 V
Test points
Test points
Symbol
V
V
V
V
V
V
DDQ
I
I
I
DD
0L
OH
OL
IL
IL
IH
IL
Symbol
TR/TF
V
V
IH
IL
V
DDQ
-0.3
V
Min
-15
1.4
1.7
1.3
-5
-5
6431 drw 24
SS
1.0/1.0
0.9 V
- 0.2
6431 drw 23
Min
1.8
0.9
0.9 V
0
Typ
1.8
Unit
ns
V
V
V
-
-
-
-
-
-
-
-
6431 tbl 20
Note
1
VDD+0.3
V
6.42
Max
+15
0.5
0.2
1.9
1.9
+5
+5
DDQ
21
JTAG AC Test Load
Unit
µA
µA
µA
V
V
V
V
V
V
TDO
6431 tbl 19
Note
1
1
Z
0
= 50Ω
Commercial Temperature Range
6431 drw 25
0.9 V
50Ω
,