HAT3008R Hitachi Semiconductor, HAT3008R Datasheet
HAT3008R
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HAT3008R Summary of contents
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... HAT3008R/HAT3008RJ Silicon N/P Channel Power MOS FET High Speed Power Switching Features For Automotive Application ( at Type Code “J “) Low on-resistance Capable gate drive High density mounting Outline SOP– Nch ...
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... Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note duty cycle 2. 1 Drive operation : When using the glass epoxy board (FR4 1.6 mm), PW 10s 3 ...
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... Gate to source breakdown voltage Gate to source leak current Zero gate voltage HAT3008R drain current HAT3008RJ I Zero gate voltage HAT3008R drain current HAT3008RJ I Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time ...
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... Gate to source breakdown voltage Gate to source leak current Zero gate voltage HAT3008R drain current HAT3008RJ Zero gate voltage HAT3008R drain current HAT3008RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time ...
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... Ambient Temperature Typical Output Characteristics 3.5 V Pulse Test Drain to Source Voltage HAT3008R/HAT3008RJ Maximum Safe Operation Area 100 0.3 Operation in this area is 0.1 limited °C 0.03 1 shot pulse 0.01 150 200 0.1 0.3 Drain to Source Voltage Ta (° ...
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... HAT3008R/HAT3008RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 0.4 0.3 0.2 0 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test 0.16 0. – Case Temperature 6 Static Drain to Source on State Resistance 1.0 Pulse Test 0.5 0 ...
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... Gate Charge Qg (nc) HAT3008R/HAT3008RJ Typical Capacitance vs. Drain to Source Voltage 2000 1000 500 200 100 MHz Drain to Source Voltage V Switching Characteristics 1000 20 300 ...
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... HAT3008R/HAT3008RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source to Drain Voltage Avalanche Test Circuit V DS Monitor I Monitor Vin Switching Time Test Circuit Vin Monitor D.U. Vin Maximun Avalanche Energy vs. ...
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... V –5 V –4 V –8 Pulse Test –6 –4 – –2 –4 –6 Drain to Source Voltage HAT3008R/HAT3008RJ Maximum Safe Operation Area –100 –30 –10 –3 –1 –0.3 Operation in this area is –0.1 limited by R –0. °C 1 shot pulse –0.01 150 200 – ...
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... HAT3008R/HAT3008RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.5 –0.4 –0.3 –0.2 –0.1 0 –4 –8 –12 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 0.3 –0 –4 V 0.2 GS 0.1 – – Case Temperature 10 Static Drain to Source on State Resistance vs ...
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... V –20 – – – –25 V –80 –10 V –100 Gate Charge Qg (nc) HAT3008R/HAT3008RJ Typical Capacitance vs. Drain to Source Voltage 2000 1000 500 200 100 –10 0 –10 –20 Drain to Source Voltage V Switching Characteristics 1000 – µ ...
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... HAT3008R/HAT3008RJ Reverse Drain Current vs. Source to Drain Voltage –10 –8 –6 – –4 –5 V –2 0 –0.4 –0.8 –1.2 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Vin 50 -15 V Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 - Maximun Avalanche Energy vs. ...
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... Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ HAT3008R/HAT3008RJ ch – f( (t) • ch – – 125 °C/ °C When using the glass epoxy board (FR4 40x40x1.6 mm 100 100 Pulse Width PW (S) ch – ...
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... HAT3008R/HAT3008RJ Package Dimensions 5.0 Max 1.27 0.51 Max 0.25 14 6.2 Max 0 – 8 1.27 Max 0.15 Hitachi code EIAJ M JEDEC Unit: mm FP–8DA — MS-012AA ...
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... Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 HAT3008R/HAT3008RJ Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd. 16 Collyer Quay #20-00 Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Hitachi Tower ...