HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 11

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

–100
500
200
100
–20
–40
–60
–80
50
20
10
–0.1 –0.2
5
0
0
V
Reverse Drain Current
DS
V
Dynamic Input Characteristics
Body–Drain Diode Reverse
DD
8
Gate Charge
= –50 V
V
–25 V
–10 V
Recovery Time
–0.5
DD
= –10 V
16
–25 V
–50 V
di / dt = 50 A / µs
V
GS
–1
V
= 0, Ta = 25 °C
GS
24
Qg (nc)
–2
I
I
D
DR
= –3.5 A
32
–5
(A)
–10
40
0
–4
–8
–12
–16
–20
1000
2000
1000
500
200
100
300
100
50
20
10
30
10
–0.1 –0.2
3
1
0
Drain to Source Voltage V
–10
Typical Capacitance vs.
Drain to Source Voltage
HAT3008R/HAT3008RJ
t f
Switching Characteristics
Drain Current
V
Pw = 5 µs, duty < 1 %
–0.5 –1
GS
–20
r t
= –10 V, V
t
d(off)
Ciss
Coss
–30
Crss
–2
t
d(on)
I
DD
D
V
f = 1 MHz
DS
–40
GS
= –30 V
(A)
–5
= 0
(V)
–50
–10
11