HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 2

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT3008R/HAT3008RJ
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode
reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Note:
2
1. PW
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
4. Value at Tch=25 C, Rg 50
10 s, duty cycle
HAT3008R
HAT3008RJ
HAT3008R
HAT3008RJ
1 %
Symbol
V
V
I
I
I
I
E
Pch
Pch
Tch
Tstg
D
D(pulse)
DR
AP
DSS
GSS
AR
Note4
Note4
Note2
Note3
Note1
Ratings
Nch
60
5
40
5
—
5
—
2.14
2
3
150
– 55 to + 150
20
Pch
– 60
– 3.5
– 28
– 3.5
—
– 3.5
—
1.05
2
3
150
–55 to + 150
20
Unit
V
V
A
A
A
—
A
—
mJ
W
W
C
C