HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 7

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

500
200
100
100
50
20
10
80
60
40
20
5
0.1
0
V
I
DS
Reverse Drain Current
D
0.2
Dynamic Input Characteristics
Body–Drain Diode Reverse
= 5A
8
Gate Charge
Recovery Time
V
0.5
DD
V
16
GS
= 50 V
di / dt = 50 A / µs
V
25 V
10 V
GS
1
24
= 0, Ta = 25 °C
V
Qg (nc)
DD
2
I
= 10 V
DR
25 V
50 V
32
5
(A)
10
40
20
16
12
8
4
0
2000
1000
1000
500
200
100
300
100
50
20
10
30
10
3
1
0.1
0
V
f = 1 MHz
Drain to Source Voltage V
GS
0.2
10
Switching Characteristics
HAT3008R/HAT3008RJ
= 0
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
0.5
t f
V
PW = 5 µs, duty < 1 %
20
GS
t
= 10 V, V
d(off)
1
r t
30
2
I
D
t
DD
Coss
Ciss
d(on)
(A)
Crss
40
DS
= 30 V
5
(V)
50
10
7