HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 5

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics ( N Channel )
4.0
3.0
2.0
1.0
10
8
6
4
2
0
0
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Typical Output Characteristics
Ambient Temperature
2
3.5 V
50
10 V
4 V
4
100
6
V
GS
Pulse Test
150
V
= 2 V
2.5 V
Ta (°C)
3 V
DS
8
(V)
200
10
0.03
0.01
100
0.3
0.1
30
10
10
3
1
8
6
4
2
0
0.1
Operation in
this area is
limited by R
Drain to Source Voltage
Ta = 25 °C
1 shot pulse
Gate to Source Voltage
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
0.3
1
HAT3008R/HAT3008RJ
Tc = 75°C
= 10 V
1
DS(on)
2
3
3
–25°C
25°C
10
V
V
GS
DS
4
30
(V)
(V)
100
5
5