HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 4

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT3008R/HAT3008RJ
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage
drain current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4
( P Channel )
5. Pulse test
HAT3008R
HAT3008RJ
HAT3008R
HAT3008RJ
Symbol Min
V
V
I
I
I
I
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
DSS
DSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
– 60
—
—
—
—
—
–1.2
—
—
3
—
—
—
—
—
—
—
—
—
20
Typ
—
—
—
—
—
—
—
—
0.12
0.16
4.5
600
290
75
11
30
100
55
– 0.98 – 1.28 V
70
Max
—
—
–1
–0.1
—
–10
–2.2
0.15
0.23
—
—
—
—
—
—
—
—
—
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
ns
A
A
A
A
A
Test Conditions
I
I
V
V
V
Ta = 125 C
V
I
I
I
V
V
f = 1MHz
V
V
IF = – 3.5 A, V
IF = – 3.5 A, V
diF/ dt = 50 A/ s
D
G
D
D
D
GS
DS
DS
DS
DS
GS
GS
DD
= – 10 mA, V
=
= – 2 A, V
= – 2 A, V
= – 2 A, V
=
= – 60 V, V
= – 48 V, V
= – 10 V, I
= –10 V
= 0
= –10 V, I
– 30 V
100 A, V
16 V, V
GS
GS
DS
D
GS
GS
= –10 V
= – 10 V
= – 4 V
GS
GS
DS
D
= – 2 A
GS
DS
= – 1mA
= 0
= 0
= 0
= 0
= 0
= 0
= 0
Note4
Note4
Note4
Note4