HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 12

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT3008R/HAT3008RJ
12
Vin
-15 V
–10
–8
–6
–4
–2
0
Source to Drain Voltage
Vin
-10 V
Vin Monitor
–10 V
–0.4
Reverse Drain Current vs.
Switching Time Test Circuit
Source to Drain Voltage
V
Monitor
50
DS
50
Avalanche Test Circuit
–5 V
Rg
–0.8
D.U.T.
–1.2
V
GS
D. U. T
I
Monitor
Pulse Test
AP
= 0, 5 V
V
R
–1.6
L
SD
V
= –30 V
L
DD
Vout
Monitor
(V)
–2.0
V
DD
0
V
DD
2.5
2.0
1.5
1.0
0.5
td(on)
E
Vout
Vin
0
AR
25
I
=
AP
Channel Temperature Tch (°C)
Maximun Avalanche Energy vs.
Channel Temperature Derating
1
2
Switching Time Waveform
10%
50
Avalanche Waveform
I
• L • I
10%
D
90%
tr
AP
75
2
•
td(off)
100
I
V
L = 100 µH
duty < 0.1 %
Rg > 50
V
AP
DSS
DD
V
= –3.5 A
DSS
= –25 V
V
– V
DS
125
90%
V
DD
90%
(BR)DSS
10%
t
f
150