HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 6

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT3008R/HAT3008RJ
6
0.20
0.16
0.12
0.08
0.04
0.5
0.4
0.3
0.2
0.1
–40
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
Pulse Test
V
Gate to Source Voltage
GS
Case Temperature
4
0
= 4 V
Gate to Source Voltage
10 V
vs. Temperature
40
8
12
80
I
D
= 5 A
Tc
Pulse Test
I
V
D
120
16
1, 2, 5 A
GS
= 5 A
(°C)
2 A
1 A
1, 2 A
(V)
160
20
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0.5
50
20
10
Static Drain to Source on State Resistance
5
2
1
0.1
0.1
V
Pulse Test
Forward Transfer Admittance vs.
DS
0.3
0.2
= 10 V
Drain Current I
Drain Current
vs. Drain Current
0.5
1
Drain Current
V
Tc = –25 °C
GS
75 °C
3
1
= 4 V
10
I
2
D
D
25 °C
Pulse Test
(A)
(A)
10 V
30
5
100
10