HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 9

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

( P Channel )
–10
4.0
3.0
2.0
1.0
–8
–6
–4
–2
0
0
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Typical Output Characteristics
Ambient Temperature
–2
–4 V
50
–10 V
–5 V
–4
100
–6
V
GS
Pulse Test
150
= –2.5 V
V
–3.5 V
–3 V
Ta (°C)
DS
–8
(V)
–10
200
–0.03
–0.01
–100
–0.3
–0.1
–30
–10
–10
–3
–1
–8
–6
–4
–2
–0.1 –0.3
0
Operation in
this area is
limited by R
V
Pulse Test
Ta = 25 °C
1 shot pulse
Drain to Source Voltage
Gate to Source Voltage
Note 6 :
Typical Transfer Characteristics
DS
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Maximum Safe Operation Area
–1
= 10 V
Tc = 75 °C
HAT3008R/HAT3008RJ
–1
DS(on)
–2
–3
–3
–10
25 °C
–25 °C
V
V
–4
–30
DS
GS
(V)
(V)
–100
–5
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