TN28F010-150 Intel Corporation, TN28F010-150 Datasheet - Page 10

• Manufacturer Part Number: TN28F010-150
• Description: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
• Manufacturer: Intel Corporation

28F010
2.2.1.3
With CE# at a logic-high level, the standby
operation disables most of the 28F010’s circuitry
and
consumption. The outputs are placed in a high-
impedance state, independent of the OE# signal. If
the
programming, or program/erase verification, the
device draws active current until the operation is
terminated.
2.2.1.4
The intelligent identifier operation outputs the
manufacturer code (89H) and device code (B4H).
Programming equipment automatically matches the
device with its proper erase and programming
algorithms.
With CE# and OE# at a logic low level, raising A
high voltage V
the operation. Data read from locations 0000H and
0001H represent the manufacturer's code and the
device code, respectively.
The manufacturer and device codes can also be
read via the command register, for instances where
the 28F010 is erased and reprogrammed in the
target system. Following a write of 90H to the
command register, a read from address location
0000H outputs the manufacturer code (89H). A
read from address 0001H outputs the device code
(B4H).
10
28F010
substantially
Standby
Intelligent Identifier Operation
ID
is
(see DC Characteristics ) activates
deselected
reduces
during
device
erasure,
power
9
to
2.2.1.5
Device erasure and programming are accomplished
via the command register, when high voltage is
applied to the V
serve as input to the internal state machine. The
state machine outputs dictate the function of the
device.
The command register itself does not occupy an
addressable memory location. The register is a
latch used to store the command, along with
address and data information needed to execute
the command.
The command register is written by bringing WE# to
a logic-low level (V
are latched on the falling edge of WE#, while data is
latched on the rising edge of the WE# pulse.
Standard microprocessor write timings are used.
Refer to AC Characteristics—Write/Erase/Program
Only
waveforms for specific timing parameters.
2.2.2
When low voltage is applied to the V
contents of the command register default to 00H,
enabling read-only operations.
Placing high voltage on the V
read/write
selected by writing specific data patterns into the
command register. Table 3 defines these 28F010
register commands.
Operations
COMMAND DEFINITIONS
operations.
Write
PP
pin. The contents of the register
IL
and
), while CE# is low. Addresses
Device
the
erase/programming
PP
operations
pin enables
PP
pin, the
are