TN28F010-150 Intel Corporation, TN28F010-150 Datasheet - Page 15

• Manufacturer Part Number: TN28F010-150
• Description: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
• Manufacturer: Intel Corporation

NOTES:
1.
2.
3.
4.
Increment Addr
See DC Characteristics for the value of V
Erase Verify is performed only after chip-erasure. A final read/compare may be performed (optional) after the register is
written with the Read command.
Refer to Principles of Operation .
CAUTION: The algorithm must be followed to ensure proper and reliable operation of the device.
Y
N
Write Erase Cmd
Write Read Cmd
Time Out 10 ms
Start Erasure
Last Address?
Time Out 6 µs
Apply V
ADDR = 00H
Apply V
Data = 00H?
Bytes to 00H
PLSCNT = 0
Data = FFH?
Set-Up Cmd
Program All
Write Erase
Write Erase
from Device
Verify Cmd
Completed
Read Data
Erasure
PPH
PPL
N
Y
Y
(1)
(1)
(4)
Figure 5. 28F010 Quick-Erase Algorithm
N
PPH
and V
Apply V
Erase Error
PLSCNT =
1000?
Inc
PPL
PPL
.
N
Y
(1)
Operation
Stand-by
Standby
Standby
Standby
Standby
Write
Write
Write
Read
Write
Bus
Command
Erase
Set-Up
Erase
Erase
Verify
Read
(2)
Entire Memory Must = 00H
Before Erasure
Use Quick-Pulse
Programming Algorithm
(Figure 4)
Initialize Addresses and
Pulse-Count
Data = 20H
Data = 20H
Duration of Erase Operation
(t
Addr = Byte to Verify;
Data = A0H; Stops Erase
Operation
t
Read Byte to Verify Erasure
Compare Output to FFH
Increment Pulse-Count
Data = 00H, Resets the
Register for Read Operations
Wait for V
WHGL
Wait for V
WHWH2
)
Comments
(3)
PP
PP
Ramp to V
Ramp to V
28F010
PPL
PPH
(1)
0207_05
(1)
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