TN28F010-150 Intel Corporation, TN28F010-150 Datasheet - Page 32

• Manufacturer Part Number: TN28F010-150
• Description: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
• Manufacturer: Intel Corporation

28F010
4.11
NOTES:
1.
2.
3.
4.
NOTE:
Alternative CE#-Controlled Write Timings also apply to erase operations.
32
Chip Erase Time
Chip Program Time
“Typicals” are not guaranteed, but based on samples from production lots. Data taken at 25 °C, 12.0 V V
Minimum byte programming time excluding system overhead is 16 µsec (10 µsec program + 6 µsec write recovery), while
maximum is 400 µsec/byte (16 µsec x 25 loops allowed by algorithm). Max chip programming time is specified lower than
the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case
byte.
Excludes 00H programming prior to erasure.
Excludes system level overhead.
Parameter
Erase and Programming Performance
Figure 15. Alternate AC Waveforms for Programming Operations
Notes
1, 3, 4
1, 2, 4
Min
Typical
1
2
Max
12.5
10
PP
.
Unit
Sec
Sec
290207-19