TN28F010-150 Intel Corporation, TN28F010-150 Datasheet - Page 23

• Manufacturer Part Number: TN28F010-150
• Description: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
• Manufacturer: Intel Corporation

4.6
NOTES:
Refer to Section 4.4.
4.7
Symbol
I
V
V
V
I
I
I
I
I
I
I
I
I
I
Symbol
ID
LI
LO
CCS
CC1
CC2
CC3
CC4
CC5
PPS
PP1
PPL
PPH
LKO
DC Characteristics—TTL/NMOS Compatible—Extended Temperature
Products
DC Characteristics—CMOS Compatible—Extended Temperature Products
A
Current
V
Operations
V
Operations
V
Voltage
Input Leakage Current
Output Leakage Current
V
V
V
V
V
Current
V
V
V
Current or Standby
Current
9
PP
PP
CC
CC
CC
CC
CC
CC
CC
PP
PP
Intelligent Identifier
during Read-Only
during Read/Write
Erase/Write Lock
Leakage Current
Read Current, ID
Standby Current
Active Read Current
Programming Current
Erase Current
Program Verify
Erase Verify Current
Parameter
Parameter
(Continued)
Notes
Notes
1, 2
1, 2
1, 2
1, 2
1, 2
1
1
1
1
1
1
11.40
0.00
Min
Min
2.5
Limits
Typ
Limits
Typ
1.0
5.0
5.0
5.0
90
50
10
90
(3)
(3)
12.60
Max
Max
±1.0
500
±10
100
±10
200
±10
6.5
30
10
30
30
30
Unit
Unit
mA V
mA Programming in Progress
mA Erasure in Progress
mA V
mA V
µA
µA
µA
µA
µA
µA
V
V
V
A
NOTE: Erase/Program are
Inhibited when V
V
V
V
V
V
CE# = V
f = 10 MHz, I
Program Verify in Progress
Erase Verify in Progress
V
V
V
9
CC
IN
CC
OUT
CC
CC
PP
PP
PP
PP
PP
= V
= V
= V
= V
> V
= V
= V
= V
= V
= V
V
V
Test Conditions
Test Conditions
ID
CC
PPH
PPH
CC
CC
CC
CC
CC
CC
CC
CC
CC
or V
Max
Max
Max
Max, CE# = V
±0.2 V
or V
OUT
SS
SS
PP
= 0 mA
= V
28F010
PPL
IL
23