TN28F010-150 Intel Corporation, TN28F010-150 Datasheet - Page 20

• Manufacturer Part Number: TN28F010-150
• Description: 28F010 1024K (128K X 8) CMOS FLASH MEMORY
• Manufacturer: Intel Corporation

28F010
4.4
NOTES:
Sampled, not 100% tested.
1.
2.
3.
4.5
20
Symbol
I
V
V
V
Symbol
I
I
I
I
I
I
I
I
I
ID
LI
LO
CCS
CC1
CC2
CC3
CC4
CC5
PPS
PPL
PPH
LKO
All currents are in RMS unless otherwise noted. Typical values at V
valid for all product versions (packages and speeds).
Not 100% tested: characterization data available.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots.
DC Characteristics—TTL/NMOS Compatible—Commercial Products
(Continued)
DC Characteristics—CMOS Compatible—Commercial Products
A
Current
V
Operations
V
Operations
V
Voltage
Input Leakage Current
Output Leakage Current
V
V
V
V
V
Current
V
V
9
PP
PP
CC
CC
CC
CC
CC
CC
CC
PP
Intelligent Identifier
during Read-Only
during Read/Write
Erase/Write Lock
Standby Current
Leakage Current
Active Read Current
Programming Current
Erase Current
Program Verify
Erase Verify Current
Parameter
Parameter
Notes
Notes
1, 2
1, 2
1, 2
1, 2
1, 2
1
1
1
1
1
11.40
0.00
Min
Min
2.5
Limits
Typ
Limits
Typ
1.0
5.0
5.0
5.0
90
50
10
(3)
(3)
CC
12.60
= 5.0 V, V
±1.0
Max
Max
±10
±10
200
100
6.5
30
10
15
15
15
Unit
Unit
mA V
mA Programming in Progress
mA Erasure in Progress
mA V
mA V
µA
µA
µA
µA
µA
PP
V
V
V
= 12.0 V, T = 25 °C. These currents are
A
NOTE: Erase/Program are
Inhibited when V
V
V
V
V
V
CE# = V
f = 6 MHz, I
Program Verify in Progress
Erase Verify in Progress
V
9
CC
IN
CC
OUT
CC
CC
PP
PP
PP
= V
= V
= V
= V
= V
= V
= V
= V
= V
V
Test Conditions
ID
Test Conditions
CC
PPH
PPH
CC
CC
CC
CC
CC
CC
CC
or V
Max
Max
Max
Max, CE# = V
±0.2 V
OUT
or V
SS
= 0 mA
SS
PP
= V
PPL
IL