MT16VDDF12864HG-26A Micron, MT16VDDF12864HG-26A Datasheet

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MT16VDDF12864HG-26A

Manufacturer Part Number
MT16VDDF12864HG-26A
Description
DRAM_Module, high-speed CMOS, dynamic random-access, 512MB and 1GB memory modules organized in a x64 configuration
Manufacturer
Micron
Datasheet
SMALL-OUTLINE
DDR SDRAM DIMM
Features
• 200-pin, small-outline, dual in-line memory
• Fast data transfer rates PC1600, PC2100, and
• Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR
• 512MB (64 Meg x 64), 1GB (128 Meg x 64)
• V
• V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 7.8125µs maximum average periodic refresh
• Serial Presence Detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
Table 1:
09005aef80a646bc
DDF16C64_128x64HG_A.fm - Rev. A 3/03 EN
Refresh Count
Device Row Addressing
Device Bank Addressing
Device Configuration
Device Column Addressing
Module Rank Addressing
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
module (SODIMM)
PC2700
SDRAM components
aligned with data for WRITEs
architecture; two data accesses per clock cycle
received with data—i.e., source-synchronous data
capture
interval
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.5V
Address Table
1
NOTE:
OPTIONS
• Package
• Frequency/CAS Latency
MT16VDDF6464H – 512MB
MT16VDDF12864H – 1GB
For the latest data sheet, please refer to the Micron
site:
Figure 1: 200-Pin SODIMM (MO-224)
200-pin SODIMM (Standard)
200-pin SODIMM (Lead-free)
167 MHz (333 MT/s) CL = 2.5
133 MHz (266 MT/s) CL = 2
133 MHz (266 MT/s) CL = 2
133 MHz (266 MT/s) CL = 2.5
100 MHz (200 MT/s) CL = 2
www.micron.com/moduleds
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K (A0–A12)
4 (BA0, BA1)
1K (A0–A9)
2 (S0#, S1#)
32 Meg x 8
512MB
Contact factory for availability of lead-free prod-
ucts.
8K
200-PIN DDR SODIMM
512MB, 1GB (x64)
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
64 Meg x 8
©2003, Micron Technology Inc.
1GB
ADVANCE
8K
MARKING
-335
-262
-26A
-265
-202
G
Y
â
Web

Related parts for MT16VDDF12864HG-26A

MT16VDDF12864HG-26A Summary of contents

Page 1

... DDF16C64_128x64HG_A.fm - Rev. A 3/03 EN ‡ PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS. 512MB, 1GB (x64) 200-PIN DDR SODIMM MT16VDDF6464H – ...

Page 2

... MT16VDDF6464HG-26A__ MT16VDDF6464HY-26A__ MT16VDDF6464HG-265__ MT16VDDF6464HY-265__ MT16VDDF6464HG-202__ MT16VDDF6464HY-202__ MT16VDDF12864HG-335__ MT16VDDF12864HY-335__ MT16VDDF12864HG-262__ MT16VDDF12864HY-262__ MT16VDDF12864HG-26A__ MT16VDDF12864HY-26A__ MT16VDDF12864HG-265__ MT16VDDF12864HY-265__ MT16VDDF12864HG-202__ MT16VDDF12864HY-202__ NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult fac- tory for current Revision codes. Example: MT16VDDF6464HG-265A1. 09005aef80a646bc DDF16C64_128x64HG_A ...

Page 3

... DQ22 100 A11 150 V SS U10 U11 U12 U13 U15 (all even pins) Indicates a V pin SS Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE PIN SYMBOL 152 DQ46 154 DQ47 156 V DD 158 CK1# 160 CK1 162 ...

Page 4

... Input Data Write Mask. DM LOW allows WRITE operation. DM HIGH blocks WRITE operation. DM lines do not affect READ operation. 4 512MB, 1GB (x64) 200-PIN DDR SODIMM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE ©2003, Micron Technology Inc. ...

Page 5

... Do Not Use: These pins are not connected on this module, but are assigned pins on other modules in this product family. 5 512MB, 1GB (x64) 200-PIN DDR SODIMM DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE ©2003, Micron Technology Inc. ...

Page 6

... U12, U13, U14, U16 120 CK1 DDR SDRAMs U4, U5, U6, U8 CK1# U9, U10, U11, U15 CK2 120Ω CK2# SPD/EEPROM DDR SDRAMs DDR SDRAMs DDR SDRAMs Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE ©2003, Micron Technology Inc. ...

Page 7

... Mode register bits A0–A2 specify the burst length, A3 specifies the type of burst (sequential or inter- leaved), A4–A6 specify the CAS latency, and A7–A12 specify the operating mode. Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 ADVANCE 2 C bus ...

Page 8

... M12 M11 M10 Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 ADVANCE Address Bus Mode Register (Mx) Burst Length Burst Length Reserved ...

Page 9

... Definition Diagram, on page 10. The extended mode 75 £ f £ 125 register is programmed via the LOAD MODE REGIS- TER command to the mode register (with BA0 = 1 and Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 ADVANCE 512MB, 1GB (x64) 200-PIN DDR SODIMM ...

Page 10

... NOTE: 1. BA1 and BA0 (E14 and E13) must be “0, 1” to select the Extended Mode Register (vs. the base Mode Register). 2. The QFC# option is not supported. Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 ADVANCE Address Bus 4 3 ...

Page 11

... Bank/Row Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 ADVANCE ADDR NOTES Bank/Col 3 Bank/Col Code Op-Code 8 DM DQS L Valid H X ©2003, Micron Technology Inc. ...

Page 12

... +2.5V ±0.2V DD MIN MAX UNITS + 0.310 – V – 0.310 V REF 0.49 ´ Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE UNITS NOTES V 32 32, 36 µA 47 µ 33, 34 ...

Page 13

... LOW) mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE UNITS NOTES 21, 28 21 ...

Page 14

... TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD 2p (CKE LOW) mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE UNITS NOTES 21, 28 21, 28 ...

Page 15

... MRD QHS t 0.75 QHS t 42 70,000 RAS 18 t RAP Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 ADVANCE 512MB, 1GB (x64) 200-PIN DDR SODIMM MIN MAX UNITS +2.5V ±0.2V DD -262 ...

Page 16

... WTR DQSQ 70.3 REFC 7.8 t REFI VTD XSNR t 200 200 XSRD Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 ADVANCE 512MB, 1GB (x64) -262 MAX UNITS NOTES 1 0 18, 19 0.6 ...

Page 17

... QHS 40 120,000 t RAS t 20 RAP RFC t 20 RCD 0.9 1.1 RPRE Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 ADVANCE 512MB, 1GB (x64) 200-PIN DDR SODIMM = +2.5V ±0.2V DD -265 -202 MAX MIN MAX UNITS NOTES +0.75 -0.8 +0.8 ns 0.55 0.45 0. 0.55 0.45 0.55 ...

Page 18

... DQSQ QH - DQSQ t 70.3 70.3 REFC t 7.8 7.8 REFI VTD XSNR 200 200 t XSRD Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 ADVANCE 512MB, 1GB (x64) -202 UNITS NOTES 0 18, 19 0.4 0 ...

Page 19

... RC or RFC) for I measurements is the that meets the minimum measurements is the largest multi that meets the maximum absolute t RAS. Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE stabi- REF REF (DC) MIN, IH (DC RAS ...

Page 20

... Clock Duty Cycle Micron Technology, Inc., reserves the right to change products or specifications without notice. 20 512MB, 1GB (x64) 200-PIN DDR SODIMM maintain at least the target DC level (DC). IH must not vary more than 4 percent if CKE ...

Page 21

... For -265, -26A, -262 and -335 35mA at 100 MHz. 42. Random addressing changing and 50 percent of data changing at every transfer. 43. Random addressing changing and 100 percent of data changing at every transfer. Figure 9: Pull-Up Characteristics Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 ADVANCE Q + 1.5V for a DD undershoot: IL ...

Page 22

... DLL is required to be reset. This is followed by 200 clock cycles. 47. Leakage number reflects the worst case leakage possible through the module pin, not what each memory device contributes. Micron Technology, Inc., reserves the right to change products or specifications without notice. 22 ADVANCE ©2003, Micron Technology Inc. ...

Page 23

... Figure 11: Definition of Start and Stop SCL SDA DATA STABLE Micron Technology, Inc., reserves the right to change products or specifications without notice. 23 512MB, 1GB (x64) 200-PIN DDR SODIMM START BIT ...

Page 24

... DDR SODIMM CHIP ENABLE SA2 SA1 SA0 1 0 SA2 SA1 SA0 t SU:DAT t SU:STO Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE BUF UNDEFINED ©2003, Micron Technology Inc. ...

Page 25

... I t 4.7 LOW 100 KHz SCL 250 t SU:DAT t 4.7 SU:STA t 4.7 SU:STO t 10 WRC Micron Technology, Inc., reserves the right to change products or specifications without notice. ADVANCE UNITS V + 0.5 V ´ 0 µA µA µA mA NOTES µs µ µs µs µs ns µs µs ns µ ...

Page 26

... RRD (-262/-26A/-265/ -202) 18ns (-335) t RCD) 15ns (-262) 20ns (-26A/-265/-202) Micron Technology, Inc., reserves the right to change products or specifications without notice. 26 ADVANCE 512MB, 1GB (x64) 200-PIN DDR SODIMM MT16VDDF6464H MT16VDDF12864H ...

Page 27

... Release 0.0 -335 -262 -26A -265 -202 MICRON 01–11 1-9 0 Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 ADVANCE 512MB, 1GB (x64) 200-PIN DDR SODIMM MT16VDDF6464H MT16VDDF12864H ...

Page 28

... ENTRY (VERSION) MT16VDDF6464H MT16VDDF12864H Variable Data Variable Data Variable Data – RP. Actual device spec value is 40 ns. Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 ADVANCE Variable Data Variable Data Variable Data – ©2003, Micron Technology Inc. ...

Page 29

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc. 09005aef80a646bc DDF16C64_128x64HG_A.fm - Rev. A 3/03 EN FRONT VIEW 2 ...

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